ULTRAVIOLET LASER-ASSISTED METALORGANIC CHEMICAL VAPOR-DEPOSITION OF GAAS

被引：4

作者：

YORK, PK ^{[1
]}

EDEN, JG ^{[1
]}

COLEMAN, JJ ^{[1
]}

FERNANDEZ, GE ^{[1
]}

BEERNINK, KJ ^{[1
]}

机构：

[1] UNIV ILLINOIS,EVERITT LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 10期

关键词：

D O I：

10.1063/1.344467

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5001 / 5008

页数：8

共 50 条

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[22] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF PBTE FILMS ON GAAS SUBSTRATES [J].

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[26] USE OF TERTIARYBUTYLARSINE IN THE METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH OF GAAS [J].

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[27] THE GROWTH OF GAAS ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) :C484-C484

[28] SIMULATIONS OF METALORGANIC CHEMICAL VAPOR-DEPOSITION AND OF CLUSTER FORMATION ON GAAS [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :729-732

[29] NONPLANAR GAAS/GAALAS LASERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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[30] CHARACTERIZATION OF GAAS FILMS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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