A COMPUTER-MODEL FOR THE SIMULATION OF THIN-FILM SILICON HYDROGEN ALLOY SOLAR-CELLS

被引：29

作者：

GRAY, JL

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 05期

关键词：

D O I：

10.1109/16.299672

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：906 / 912

页数：7

共 25 条

[1]

BANGHART EK, 1987, 19TH P IEEE PHOT SPE, P1396

[2] SIMPLE BAND MODEL FOR AMORPHOUS SEMICONDUCTING ALLOYS [J].

COHEN, MH ;

FRITZSCHE, H ;

OVSHINSKY, SR .

PHYSICAL REVIEW LETTERS, 1969, 22 (20) :1065-+

[3] CONDUCTION IN NON-CRYSTALLINE SYSTEMS .5. CONDUCTIVITY, OPTICAL ABSORPTION AND PHOTOCONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS [J].

DAVIS, EA ;

MOTT, NF .

PHILOSOPHICAL MAGAZINE, 1970, 22 (179) :903-&

[4]

GRAY JL, 1985, 18TH P IEEE PHOT SPE, P568

[5] THEORETICAL MODELING OF AMORPHOUS SILICON-BASED ALLOY P-I-N SOLAR-CELLS [J].

HACK, M ;

SHUR, M .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) :5858-5863

[6] ENERGY-DEPENDENCE OF THE OPTICAL MATRIX ELEMENT IN HYDROGENATED AMORPHOUS AND CRYSTALLINE SILICON [J].

JACKSON, WB ;

KELSO, SM ;

TSAI, CC ;

ALLEN, JW ;

OH, SJ .

PHYSICAL REVIEW B, 1985, 31 (08) :5187-5198

[7] IDENTIFICATION OF DEEP-GAP STATES IN ALPHA-SI-H BY PHOTODEPOPULATION-INDUCED ELECTRON-SPIN RESONANCE [J].

JOHNSON, NM ;

BIEGELSEN, DK .

PHYSICAL REVIEW B, 1985, 31 (06) :4066-4069

[8] ENERGY PLACEMENT OF THE D-DANGLING-BOND TRANSITION IN A-SI-H FROM PHOTOCAPACITANCE AND PHOTOCURRENT SPECTROSCOPIES [J].

JOHNSON, NM ;

JACKSON, WB .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :335-338

[9] THE ENERGY OF THE DANGLING-BOND STATES IN A-SI [J].

LECOMBER, PG ;

SPEAR, WE .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 53 (01) :L1-L7

[10] NUMERICAL-ANALYSIS OF HETEROSTRUCTURE SEMICONDUCTOR-DEVICES [J].

LUNDSTROM, MS ;

SCHUELKE, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (09) :1151-1159

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