JFET FOR COMPLETELY DEPLETED HIGH-RESISTIVITY SILICON

被引:7
作者
RADEKA, V
REHAK, P
RESCIA, S
GATTI, E
LONGONI, A
SAMPIETRO, M
BERTUCCIO, G
HOLL, P
STRUDER, L
KEMMER, J
机构
[1] MAX PLANCK INST,D-8000 MUNCHEN,FED REP GER
[2] POLITECN MILAN,DIPARTIMENTO ELETTR,I-20133 MILAN,ITALY
[3] POLITECN MILAN,CTR ELETTR QUANTIST & STRUMENTAZIONE ELETTR,I-20133 MILAN,ITALY
[4] TECH UNIV MUNICH,D-8046 GARCHING,FED REP GER
来源
JOURNAL DE PHYSIQUE | 1988年 / 49卷 / C-4期
关键词
D O I
10.1051/jphyscol:1988475
中图分类号
学科分类号
摘要
引用
收藏
页码:363 / 366
页数:4
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