PHOTOLUMINESCENCE OF GA-DOPED ZNSE AND AS-DOPED ZNSE

被引：2

作者：

ETIENNE, D ^{[1
]}

BOUGNOT, G ^{[1
]}

机构：

[1] UNIV SCI & TECH LANGUEDOC,CTR ETUD ELECTR SOLIDES,CNRS,PL E BATAILLON,34060 MONTPELLIER,FRANCE

来源：

MATERIALS RESEARCH BULLETIN | 1975年 / 10卷 / 12期

关键词：

D O I：

10.1016/0025-5408(75)90098-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1365 / 1372

页数：8

共 12 条

[1]

BJERKELAND H, 1972, PHYS NORV, V6, P139

[2]

BLANCONNIER P, 1973, J CRYSTAL GROWTH, V17, P1

[3]

BUBE RH, 1968, J APPL PHYS, V39, P3657

[4] PAIR SPECTRA AND EDGE EMISSION IN ZINC SELENIDE [J].

DEAN, PJ ;

MERZ, JL .

PHYSICAL REVIEW, 1969, 178 (03) :1310-&

[5]

MARKOVSKII LY, 1969, OPT SPECTROSC-USSR, V27, P84

[6] OPTICAL PROPERTIES OF SUBSTITUTIONAL DONORS IN ZNSE [J].

MERZ, JL ;

SHIEVER, JW ;

NASSAU, K ;

KUKIMOTO, H .

PHYSICAL REVIEW B, 1972, 6 (02) :545-&

[7] LUMINESCENCE IN ZNS, SE CU, CL [J].

MOREHEAD, FF .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (01) :37-&

[8] VAPOR-PHASE GROWTH OF SINGLE CRYSTALS OF II-VI COMPOUNDS [J].

PIPER, WW ;

POLICH, SJ .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) :1278-&

[9] THE LUMINESCENT CENTER IN SELF-ACTIVATED ZNS PHOSPHORS [J].

PRENER, JS ;

WEIL, DJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (05) :409-414

[10] PHOSPHORUS AND ARSENIC IMPURITY CENTERS IN ZNSE .2. OPTICAL AND ELECTRICAL PROPERTIES [J].

REINBERG, AR ;

HOLTON, WC ;

DEWIT, M ;

WATTS, RK .

PHYSICAL REVIEW B, 1971, 3 (02) :410-&

← 1 2 →