TEMPERATURE-DEPENDENCE OF RADIATIVE RECOMBINATION COEFFICIENT IN SILICON

被引：118
|
作者：
SCHLANGENOTTO, H [1 ]
MAEDER, H [1 ]
GERLACH, W [1 ]
机构：
[1] AEG TELEFUNKEN, FORSCH INST, FRANKFURT, WEST GERMANY
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1974年 / 21卷 / 01期
关键词：
D O I：
10.1002/pssa.2210210140
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：357 / 367
页数：11
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