PD-INP SCHOTTKY DIODE HYDROGEN SENSORS

被引：45

作者：

YOUSUF, M ^{[1
]}

KULIYEV, B ^{[1
]}

LALEVIC, B ^{[1
]}

POTEAT, TL ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 08期

关键词：

D O I：

10.1016/0038-1101(82)90205-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：753 / 758

页数：6

共 12 条

[1]

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[2]

CHEUNG PW, 1978, THEORY DESIGN BIOMED

[3] ADSORPTION OF HYDROGEN ON PALLADIUM SINGLE-CRYSTAL SURFACES [J].

CONRAD, H ;

ERTL, G ;

LATTA, EE .

SURFACE SCIENCE, 1974, 41 (02) :435-446

[4] HYDROGEN-SENSITIVE SCHOTTKY-BARRIER DIODES [J].

ITO, K .

SURFACE SCIENCE, 1979, 86 (JUL) :345-352

[5]

KERAMATI B, 1978, MAR P INT TOP C YORK

[6] HYDROGEN-SENSITIVE MOS FIELD-EFFECT TRANSISTOR [J].

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SHIVARAMAN, S ;

SVENSSON, C ;

LUNDKVIST, L .

APPLIED PHYSICS LETTERS, 1975, 26 (02) :55-57

[7]

LUNDSTROM I, 1975, J APPL PHYS, V46, P3876

[8]

POTEAT T, 1981, THESIS RUTGERS U

[9] PD-MOS HYDROGEN AND HYDROCARBON SENSOR DEVICE [J].

POTEAT, TL ;

LALEVIC, B .

ELECTRON DEVICE LETTERS, 1981, 2 (04) :82-84

[10]

POTEAT TL, 1981, UNPUB APR P INT C HY

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