EXCITATION SPECTRUM OF BISMUTH DONORS IN SILICON

被引：51

作者：

BUTLER, NR ^{[1
]}

FISHER, P ^{[1
]}

RAMDAS, AK ^{[1
]}

机构：

[1] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907

来源：

PHYSICAL REVIEW B | 1975年 / 12卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.12.3200

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3200 / 3209

页数：10

共 31 条

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