REACTION AT A REFRACTORY-METAL SEMICONDUCTOR INTERFACE - V/GAAS(110)

被引：16

作者：

GRIONI, M

JOYCE, JJ

WEAVER, JH

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.573349

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：918 / 921

页数：4

共 14 条

[1] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

Brillson, L. J. .

SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326

[2] CHEMICAL-REACTION AND SCHOTTKY-BARRIER FORMATION AT V/SI INTERFACES [J].

CLABES, JG ;

RUBLOFF, GW ;

TAN, TY .

PHYSICAL REVIEW B, 1984, 29 (04) :1540-1550

[3]

EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656

[4] STRUCTURAL MORPHOLOGY AND ELECTRONIC-PROPERTIES OF THE SI-CR INTERFACE [J].

FRANCIOSI, A ;

PETERMAN, DJ ;

WEAVER, JH ;

MORUZZI, VL .

PHYSICAL REVIEW B, 1982, 25 (08) :4981-4993

[5] ELS STUDY ON THE INITIAL-STAGE OF TI-SILICIDE FORMATION ON SI(111) AT ROOM-TEMPERATURE [J].

IWAMI, M ;

HASHIMOTO, S ;

HIRAKI, A .

SOLID STATE COMMUNICATIONS, 1984, 49 (05) :459-462

[6] X-RAY PHOTOEMISSION SPECTRA OF VALENCE BANDS OF 3D TRANSITION-METALS SC TO FE [J].

LEY, L ;

DABBOUSI, OB ;

KOWALCZYK, SP ;

MCFEELY, FR ;

SHIRLEY, DA .

PHYSICAL REVIEW B, 1977, 16 (12) :5372-5380

[7]

LUDEKE R, 1984, B AM PHYS SOC, V29, P552

[8] VALENCE BAND STUDIES OF CLEAN AND OXYGEN EXPOSED GAAS(110) SURFACES [J].

PIANETTA, P ;

LINDAU, I ;

GREGORY, PE ;

GARNER, CM ;

SPICER, WE .

SURFACE SCIENCE, 1978, 72 (02) :298-320

[9] THE SI(111)/MO INTERFACE AS STUDIED WITH SYNCHROTRON RADIATION PHOTOEMISSION AND AUGER-ELECTRON SPECTROSCOPIES [J].

ROSSI, G ;

ABBATI, I ;

BRAICOVICH, L ;

LINDAU, I ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :617-618

[10] CHEMICAL BONDING, ADATOM-ADATOM INTERACTION, AND REPLACEMENT REACTION OF COLUMN-3 METALS ON GAAS(110) [J].

SKEATH, P ;

LINDAU, I ;

SU, CY ;

SPICER, WE .

PHYSICAL REVIEW B, 1983, 28 (12) :7051-7067

← 1 2 →