LOW-ENERGY ION-BEAMS, MOLECULAR-BEAM EPITAXY, AND SURFACE-MORPHOLOGY

被引：39

作者：

TSAO, JY

CHASON, E

HORN, KM

BRICE, DK

PICRAUX, ST

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 39卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(89)90744-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：72 / 80

页数：9

共 25 条

[1]

AARTS J, 1986, APPL PHYS LETT, V48, P931, DOI 10.1063/1.96662

[2] LOW-TEMPERATURE EPITAXIAL-GROWTH OF SI AND GE AND FABRICATION OF ISOTOPIC HETEROSTRUCTURES BY DIRECT ION-BEAM DEPOSITION [J].

APPLETON, BR ;

PENNYCOOK, SJ ;

ZUHR, RA ;

HERBOTS, N ;

NOGGLE, TS .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :975-982

[3] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON [J].

BEAN, JC ;

BECKER, GE ;

PETROFF, PM ;

SEIDEL, TE .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :907-913

[4] AN OPTIMIZED INSITU ARGON SPUTTER CLEANING PROCESS FOR DEVICE QUALITY LOW-TEMPERATURE (T LESS-THAN-OR-EQUAL-TO 800-DEGREES-C) EPITAXIAL SILICON - BIPOLAR-TRANSISTOR AND PN JUNCTION CHARACTERIZATION [J].

BURGER, WR ;

REIF, R .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (10) :4255-4268

[5] ORIENTATION AND TEMPERATURE DEPENDENCE OF ELECTRON DAMAGE IN N-TYPE GERMANIUN [J].

CHEN, Y ;

MACKAY, JW .

PHILOSOPHICAL MAGAZINE, 1969, 19 (158) :357-&

[6] MORPHOLOGY OF EPITAXIAL GROWTH OF GAAS BY A MOLECULAR BEAM METHOD - OBSERVATION OF SURFACE STRUCTURES [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :2780-&

[7] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDIES OF EPITAXIAL-GROWTH ON SEMICONDUCTOR SURFACES [J].

COHEN, PI ;

PUKITE, PR ;

VANHOVE, JM ;

LENT, CS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :1251-1258

[8] APPLICATION OF THE ION BOMBARDMENT CLEANING METHOD TO TITANIUM, GERMANIUM, SILICON, AND NICKEL AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J].

FARNSWORTH, HE ;

SCHLIER, RE ;

GEORGE, TH ;

BURGER, RM .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) :1150-1161

[9]

GATES SM, UNPUB SURF SCI

[10] ADSORPTION ON SI(111) DURING CVD OF SILICON FROM SILANE - THE EFFECT OF TEMPERATURE, BOND STRENGTH, SUPERSATURATION AND PRESSURE [J].

GILING, LJ ;

DEMOOR, HHC ;

JACOBS, WPJH ;

SAAMAN, AA .

JOURNAL OF CRYSTAL GROWTH, 1986, 78 (02) :303-321

← 1 2 3 →