SINGLE-LONGITUDINAL-MODE GAAS GAALAS CHANNELED-SUBSTRATE LASERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：17

作者：

WU, YH ^{[1
]}

WERNER, M ^{[1
]}

CHEN, KL ^{[1
]}

WANG, S ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 09期

关键词：

D O I：

10.1063/1.94941

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：834 / 836

页数：3

共 9 条

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[8] GROWTH OF GAAS-GA1-XALXAS OVER PREFERENTIALLY ETCHED CHANNELS BY MOLECULAR-BEAM EPITAXY - TECHNIQUE FOR 2-DIMENSIONAL THIN-FILM DEFINITION [J].

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