XPS STUDIES OF THIN POLYCYANURATE FILMS ON SILICON-WAFERS

被引：15
作者：
DIECKHOFF, S [1 ]
SCHLETT, V [1 ]
POSSART, W [1 ]
HENNEMANN, OD [1 ]
机构：
[1] FRAUNHOFER INST ANGEW MAT FORSCH,D-14513 TELTOW,GERMANY
来源：
FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY | 1995年 / 353卷 / 3-4期
关键词：
D O I：
10.1007/BF00322052
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
Thin films of a diandicyanato bisphenol A (DCBA) prepolymer on silicon substrates have been investigated. Angle dependent X-ray photoelectron spectroscopy reveals some thickness-dependent features, which lead to an adsorption model for the DCBA prepolymer molecules. The adsorption of the first layer is governed by the interaction of the triazine rings with the substrate surface.
引用
收藏
页码：278 / 281
页数：4
相关论文
共 50 条
  • [31] BATIO3 FILMS ON SILICON-WAFERS FROM METAL ALKOXIDES
    VOROTILOV, KA
    ORLOVA, EV
    PETROVSKY, VI
    YANOVSKAJA, MI
    IVANOV, SA
    TUREVSKAYA, EP
    TUROVA, NY
    FERROELECTRICS, 1991, 123 (3-4) : 261 - 271
  • [32] THE STUDY OF PLASMA STABILITY OF POLY(ORGANOPHOSPHAZENE) FILMS PREPARED ON SILICON-WAFERS
    KAJIWARA, M
    YAMASHITA, Y
    JOURNAL OF MATERIALS SCIENCE, 1991, 26 (10) : 2797 - 2804
  • [33] INTERFACIAL STRUCTURE OF BONDED SILICON ON SILICON-WAFERS
    BENAMARA, M
    ROCHER, A
    LAANAB, L
    CLAVERIE, A
    LAPORTE, A
    SARRABAYROUSSE, G
    LESCOUZERES, L
    PEYRELAVIGNE, A
    COMPTES RENDUS DE L ACADEMIE DES SCIENCES SERIE II, 1994, 318 (11): : 1459 - 1464
  • [34] BONDING OF SILICON-WAFERS FOR SILICON-ON-INSULATOR
    MASZARA, WP
    GOETZ, G
    CAVIGLIA, A
    MCKITTERICK, JB
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (10) : 4943 - 4950
  • [35] MEASUREMENT OF SUBSURFACE DAMAGE IN SILICON-WAFERS
    BISMAYER, U
    BRINKSMEIER, E
    GUTTLER, B
    SEIBT, H
    MENZ, C
    PRECISION ENGINEERING-JOURNAL OF THE AMERICAN SOCIETY FOR PRECISION ENGINEERING, 1994, 16 (02): : 139 - 144
  • [36] MICROROUGHNESS MEASUREMENTS ON POLISHED SILICON-WAFERS
    ABE, T
    STEIGMEIER, EF
    HAGLEITNER, W
    PIDDUCK, AJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (03): : 721 - 728
  • [37] SILICON-WAFERS FOR THE 1990-S
    SEIDEL, TE
    JOURNAL OF CRYSTAL GROWTH, 1987, 85 (1-2) : 97 - 105
  • [38] 1/F NOISE IN SILICON-WAFERS
    BLACK, RD
    WEISSMAN, MB
    RESTLE, PJ
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) : 6280 - 6289
  • [39] TRANSPORT OF EXCESS CARRIERS IN SILICON-WAFERS
    KUNST, M
    SANDERS, A
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (01) : 51 - 59
  • [40] DENUDED ZONES IN CZOCHRALSKI SILICON-WAFERS
    WANG, P
    CHANG, L
    DEMER, LJ
    VARKER, CJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) : 1948 - 1952
12345