HIGH-SPEED AND HIGH-RESOLUTION ISO-A4 SIZE AMORPHOUS SI-H CONTACT LINEAR IMAGE SENSOR

被引：4

作者：

SAKAMOTO, M

OKUMURA, F

KAJIWARA, Y

UCHIDA, H

KANEKO, S

机构：

[1] NEC Corp, Kawasaki, Jpn, NEC Corp, Kawasaki, Jpn

来源：

IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY | 1984年 / 7卷 / 04期

关键词：

SEMICONDUCTING SILICON - SEMICONDUCTOR DEVICES; MIS - SEMICONDUCTOR DIODES; PHOTODIODE;

D O I：

10.1109/TCHMT.1984.1136372

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A contact linear image sensor was developed to satisfy the requirement for facsimile equipment size reduction. An amorphous Si (a-Si:H) metal insulator semiconductor (MIS) photodiode with excellent small dark-current characteristics is used as the photosensing element. In this sensor element, the electrode material is optimized for thermal stability. For detecting signals stored in the photosensing elements, 64 bits/chip ICs, using a novel driving method for low noise and high speed operation, were developed. These ICs are mounted on the sensor device substrate. ISO A4 8 elements/mm and 12 elements/mm sensor units with LED light source were designed.

引用

页码：429 / 433

页数：5

共 6 条

[1]

Kaneko S., 1982, International Electron Devices Meeting. Technical Digest, P328

[2]

Kanoh Y., 1981, International Electron Devices Meeting, P313

[3]

Komiya K., 1981, International Electron Devices Meeting, P309

[4] THE ROLE OF THE BLOCKING STRUCTURE IN HYDROGENATED AMORPHOUS-SILICON VIDICON TARGETS [J].

ODA, S ;

SAITO, K ;

TOMITA, H ;

SHIMIZU, I ;

INOUE, E .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) :7275-7280

[5]

OZAWA T, 1982, P INT MICROELECTRON, P132

[6]

SUZUKI K, 1983, 15TH P C SOL STAT DE, P36

← 1 →