MICROSCOPIC ORIGIN OF THE LIGHT-INDUCED DEFECTS IN HYDROGENATED NITROGEN-RICH AMORPHOUS-SILICON NITRIDE FILMS

被引：47

作者：

KANICKI, J

WARREN, WL

SEAGER, CH

CROWDER, MS

LENAHAN, PM

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

[2] IBM CORP,DIV STORAGE SYST PROD,SAN JOSE,CA 95193

[3] PENN STATE UNIV,UNIV PK,PA 16802

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80113-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The electron photo-excitation from the K- state and its subsequent trapping by K+ state is probably at the origin of the silicon dangling bonds (K0) formation during broad-band UV illumination of the N-rich amorphous silicon nitride films. Because the photo-excited electron will move towards the metal electrode the positive charge is expected to accumulate near the nitride-silicon interface with illumination time. Our data also suggest that the N-H group may be at the origin of the nitrogen dangling bonds creation in N-rich films.

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页码：291 / 294

页数：4

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