THE HALL-COEFFICIENT OF DISORDERED ELECTRONIC SYSTEMS IN HIGH MAGNETIC-FIELDS

被引：32
作者：
VIEHWEGER, O
EFETOV, KB
机构：
[1] Max-Planck-Inst. fur Festkorperforschung, Stuttgart
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 1990年 / 2卷 / 33期
关键词：
D O I：
10.1088/0953-8984/2/33/016
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The authors calculate the Hall resistivity in the low frequency limit for a model of independent electrons in the lower tail of the density of states of the disorder broadened lowest Landau level. It is shown that the Hall coefficient remains finite for omega to 0 even in the lowest localization regime for 2D as well as for 3D systems in contrast to the characteristics of magnetic freezing out. They relate their theoretical results to recent experiments on magnetic field induced MI transitions in doped semiconductors.
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页码：7049 / 7054
页数：6
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