THE OBSERVATION OF ANTISITE DEFECTS IN N-TYPE AND UNDOPED GAAS FOLLOWING ELECTRON-IRRADIATION AND ANNEALING

被引：20
作者：
BEALL, RB
NEWMAN, RC
WHITEHOUSE, JE
WOODHEAD, J
机构：
来源：
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1985年 / 18卷 / 17期
关键词：
D O I：
10.1088/0022-3719/18/17/006
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：3273 / 3283
页数：11
相关论文
共 32 条
[1]   THE PRODUCTION AND STRUCTURE OF THE P-P3 ANTI-SITE DEFECT IN ELECTRON-IRRADIATED N-TYPE GAP [J].
BEALL, RB ;
NEWMAN, RC ;
WHITEHOUSE, JE ;
WOODHEAD, J .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (36) :L963-L968
[2]   THE GENERATION BY ELECTRON-IRRADIATION OF ARSENIC ANTI-SITE DEFECTS IN N-TYPE GAAS [J].
BEALL, RB ;
NEWMAN, RC ;
WHITEHOUSE, JE ;
WOODHEAD, J .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (15) :2653-2659
[3]  
BEALL RB, 1984, UNPUB
[4]   DIRECT OBSERVATION OF THE PRINCIPAL DEEP LEVEL (EL2) IN UNDOPED SEMI-INSULATING GAAS [J].
BROZEL, MR ;
GRANT, I ;
WARE, RM ;
STIRLAND, DJ .
APPLIED PHYSICS LETTERS, 1983, 42 (07) :610-612
[5]   LOW-SYMMETRY INTERSTITIAL BORON CENTER IN IRRADIATED GALLIUM-ARSENIDE [J].
BROZEL, MR ;
NEWMAN, RC .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (15) :3135-3146
[6]   IDENTIFICATION OF ASGA ANTISITE DEFECTS IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].
ELLIOTT, K ;
CHEN, RT ;
GREENBAUM, SG ;
WAGNER, RJ .
APPLIED PHYSICS LETTERS, 1984, 44 (09) :907-909
[7]  
GERE EA, 1963, PARAMAGNETIC RESONAN, V2, P725
[8]   THE OBSERVATION OF HIGH-CONCENTRATIONS OF ARSENIC ANTI-SITE DEFECTS IN ELECTRON-IRRADIATED NORMAL-TYPE GAAS BY X-BAND ELECTRON-PARAMAGNETIC-RES [J].
GOSWAMI, NK ;
NEWMAN, RC ;
WHITEHOUSE, JE .
SOLID STATE COMMUNICATIONS, 1981, 40 (04) :473-477
[9]   STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].
HOLMES, DE ;
CHEN, RT ;
ELLIOTT, KR ;
KIRKPATRICK, CG .
APPLIED PHYSICS LETTERS, 1982, 40 (01) :46-48
[10]   DETERMINATION OF CARRIER CONCENTRATION AND COMPENSATION MICROPROFILES IN GAAS [J].
JASTRZEBSKI, L ;
LAGOWSKI, J ;
WALUKIEWICZ, W ;
GATOS, HC .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2301-2303
1234