PHOTOLUMINESCENCE DECAY DYNAMICS IN AN INGAN/ALGAN/GAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODE

被引：26
作者：
MOHS, G
FLUEGEL, B
GIESSEN, H
TAJALLI, H
PEYGHAMBARIAN, N
CHIU, PC
PHILLIPS, BS
OSINSKI, M
机构：
[1] UNIV NEW MEXICO,CTR HIGH TECHNOL MAT,ALBUQUERQUE,NM 87131
[2] UNIV TABRIZ,TABRIZ,IRAN
来源：
APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 11期
关键词：
D O I：
10.1063/1.114477
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The impurity-related and band-to-band photoluminescence of a commercially available III-N blue-light-emitting diode is time-resolved using femtosecond excitation and streak-camera detection. Photoluminescence decay times are reported and stimulated band-to-band emission is observed. The data are compared to a simple recombination model capable of explaining the measured behavior of the photoluminescence. (C) 1995 American Institute of Physics.
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页码：1515 / 1517
页数：3
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