CHEMICAL BEAM EPITAXIAL-GROWTH OF INP, INGAP, AND INAS HETEROJUNCTIONS USING TRIETHYLINDIUM AND BISPHOSPHINOETHANE

被引：7

作者：

CHIN, A ^{[1
]}

MARTIN, P ^{[1
]}

DAS, U ^{[1
]}

MAZUROWSKI, J ^{[1
]}

BALLINGALL, J ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 03期

关键词：

D O I：

10.1116/1.586762

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first chemical beam epitaxial growth of InP, InGaP/InP strained layer superlattices (SLS) and InGaP/InAs/InGaP quantum wells using bisphosphinoethane and tertiarybutylarsine as group V sources is reported. Mirrorlike surface morphology and excellent reflection high-energy electron diffraction patterns are observed. Room-temperature and 77 K Hall mobilities for a 2.0 mum thick InP epitaxial layer are 4200 and 22 000 cm2/V S, with carrier densities of 5.7E15 and 4.0E15 cm-3, respectively. The relatively low mobility is due to a high n-type impurity concentration at the epitaxial layer-substrate interface. The full width at half-maximum linewidth of the photoluminescence spectra are 0.84, 14.6, and 16.1 meV, for InP, InGaP/InP SLS, and InGaP/InAs/InGaP quantum well, respectively.

引用

页码：847 / 850

页数：4

共 8 条

[1] EFFECTS OF SUBSTRATE ORIENTATION, PSEUDOMORPHIC GROWTH AND SUPERLATTICE ON ALLOY SCATTERING IN MODULATION DOPED GAINAS [J].