COMPUTER-SIMULATION OF CHANNELING IMPLANTATION AT HIGH AND MEDIUM ENERGIES

Our binary collision code Crystal-TRIM is applied to simulate channeling implantation of P+ ions into silicon at energies of 0.5 and 1 MeV and at ion doses between 2 x 10(13) cm-2 and 6.7 x 10(14) cm-2. Implantations into the [100] and [110] axial channel directions are considered. For the electronic stopping of the ions a new semiempirical formula is employed. We investigate radiation-induced production of defects (vacancies and interstitials) during ion bombardment and the effect of the static atomic disorder due to electronic energy deposition. The range profiles calculated by crystal-TRIM are compared with experimental data. In the case of low ion doses a relatively good agreement is obtained if effects of radiation damage, static atomic disorder and the influence of an amorphous surface layer are taken into account simultaneously. At higher doses the effect of radiation defects produced by nuclear energy deposition prevails.