A TREATISE ON THE CAPACITANCE-VOLTAGE RELATION OF HIGH ELECTRON-MOBILITY TRANSISTORS

被引：19
作者：
SADWICK, LP
WANG, KL
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 05期
关键词：
D O I：
10.1109/T-ED.1986.22547
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：651 / 656
页数：6
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共 11 条
  • [1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS
    ANDO, T
    FOWLER, AB
    STERN, F
    [J]. REVIEWS OF MODERN PHYSICS, 1982, 54 (02) : 437 - 672
  • [2] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET
    DELAGEBEAUDEUF, D
    LINH, NT
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 955 - 960
  • [3] CHARACTERISTICS OF MODULATION-DOPED ALXGA1-XAL/GAAS FIELD-EFFECT TRANSISTORS - EFFECT OF DONOR-ELECTRON SEPARATION
    DRUMMOND, TJ
    FISCHER, R
    SU, SL
    LYONS, WG
    MORKOC, H
    LEE, K
    SHUR, MS
    [J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 262 - 264
  • [4] INFLUENCE OF ALXGA1-XAS BUFFER LAYERS ON THE PERFORMANCE OF MODULATION-DOPED FIELD-EFFECT TRANSISTORS
    DRUMMOND, TJ
    KOPP, W
    THORNE, RE
    FISCHER, R
    MORKOC, H
    [J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 879 - 881
  • [5] IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE
    HIYAMIZU, S
    SAITO, J
    NANBU, K
    ISHIKAWA, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L609 - L611
  • [6] DESIGN AND FABRICATION OF HIGH TRANSCONDUCTANCE MODULATION-DOPED (AL,GA)AS/GAAS FETS
    LEE, K
    SHUR, MS
    DRUMMOND, TJ
    SU, SL
    LYONS, WG
    FISCHER, R
    MORKOC, H
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 186 - 189
  • [7] LEE K, 1983, IEEE T ELECTRON DEV, V30, P207
  • [8] ENHANCEMENT-MODE HIGH ELECTRON-MOBILITY TRANSISTORS FOR LOGIC APPLICATIONS
    MIMURA, T
    HIYAMIZU, S
    JOSHIN, K
    HIKOSAKA, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) : L317 - L319
  • [9] DEPENDENCE OF THE MOBILITY AND THE CONCENTRATION OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS/N-ALXGA1-XAS HETEROSTRUCTURE ON THE ALAS MOLE FRACTION
    SAITO, J
    NANBU, K
    ISHIKAWA, T
    HIYAMIZU, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02): : L79 - L81
  • [10] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS
    STERN, F
    [J]. PHYSICAL REVIEW B, 1972, 5 (12): : 4891 - &
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