THE ELECTRICAL-PROPERTIES OF PBTE IMPLANTED WITH H+, AG+ OR SN+

被引:6
作者
BRYANT, FJ
STAUDTE, DM
机构
来源
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1982年 / 62卷 / 1-2期
关键词
D O I
10.1080/00337578208235410
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
SEMICONDUCTING LEAD COMPOUNDS - ION IMPLANTATION
引用
收藏
页码:69 / 75
页数:7
相关论文
共 31 条
[1]   MOBILITY OF ELECTRONS AND HOLES IN PBS, PBSE, AND PBTE BETWEEN ROOM TEMPERATURE AND 4.2-DEGREES-K [J].
ALLGAIER, RS ;
SCANLON, WW .
PHYSICAL REVIEW, 1958, 111 (04) :1029-1037
[2]  
BRICE DK, 1975, ION IMPLANTATION RAN, V1
[3]   LOW-RESISTANCE, LONG-LIFE CONTACTS BY LASER-ANNEALING OF SILVER-IMPLANTED P-TYPE PBTE [J].
BRYANT, FJ ;
STAUDTE, DM .
SOLID-STATE ELECTRONICS, 1981, 24 (07) :675-680
[4]   LONG-WAVELENGTH INFRARED PB1-XSNXTE DIODE LASERS [J].
BUTLER, JF ;
HARMAN, TC .
APPLIED PHYSICS LETTERS, 1968, 12 (10) :347-&
[5]  
CALAWA AR, 1968, T METALL SOC AIME, V242, P374
[6]   A REVIEW OF SEMICONDUCTOR PROPERTIES OF PBTE, PBSE, PBS AND PBO [J].
DALVEN, R .
INFRARED PHYSICS, 1969, 9 (04) :141-+
[7]  
DEARNALEY G, 1973, ION IMPLANTATION, P766
[8]   OPTICAL PROPERTIES OF SOME PB1-XSNXTE ALLOYS DETERMINED FROM INFRARED PLASMA REFLECTIVITY MEASUREMENTS [J].
DIONNE, G ;
WOOLLEY, JC .
PHYSICAL REVIEW B, 1972, 6 (10) :3898-&
[9]   PB1-XSNXTE PHOTOVOLTAIC DIODES AND DIODE LASERS PRODUCED BY PROTON BOMBARDMENT [J].
DONNELLY, JP ;
CALAWA, AR ;
FOYT, AG ;
LINDLEY, WT ;
HARMAN, TC .
SOLID-STATE ELECTRONICS, 1972, 15 (04) :403-&
[10]   N-P JUNCTION PHOTOVOLTAIC DETECTORS IN PBTE PRODUCED BY PROTON BOMBARDMENT [J].
DONNELLY, JP ;
HARMAN, TC ;
FOYT, AG .
APPLIED PHYSICS LETTERS, 1971, 18 (06) :259-&