Substitutional transition metal defects in silicon grown-in by the float zone technique

被引：19
作者：
Lemke, H
机构：
来源：
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-卷
关键词：
transition metals; silicon; grown-in defects; dislocations;
D O I：
10.4028/www.scientific.net/MSF.196-201.683
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Transition metal (TM) defects grown-in by the FZ technique have been investigated by DFTS for all elements with valence 9 less than or equal to N less than or equal to 11. The energy levels and their chemical shift are in fair agreement with the theoretical predictions for substitutional defects. The concentration of the electrically active defects for Cu, Ni - in contrast to that for Au, Pt - is up to three orders in magnitude lower than the total incorporated metal concentration. The influence of cooling rate and dislocation density will be discussed.
引用
收藏
页码：683 / 688
页数：6
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