MICROSCOPIC MECHANISMS OF INTERFACE STATE GENERATION BY ELECTRICAL STRESS

被引：12

作者：

STATHIS, JH

机构：

[1] IBM Research Division T.J. Watson Research Center Yorktown Heights

来源：

MICROELECTRONIC ENGINEERING | 1993年 / 22卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(93)90155-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Interface state generation by hot electrons is studied using spin-dependent recombination. Hot electrons with average energy approximately 2eV produce a paramagnetic recombination center, while hole annihilation at the Si/SiO2 interface does not produce this defect. The implications of these results for microscopic models of interface defect creation are discussed.

引用

页码：191 / 196

页数：6

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