STUDY OF EMISSION FROM (1,1,1) FACES OF GAAS NEGATIVE ELECTRON AFFINITY PHOTOEMITTERS

被引：35

作者：

BURT, MG ^{[1
]}

INKSON, JC ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,DEPT PHYS,MADINGLEY RD,CAMBRIDGE CB3 0HE,ENGLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1976年 / 9卷 / 01期

关键词：

D O I：

10.1088/0022-3727/9/1/011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：43 / 53

页数：11

共 9 条

[1]

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[5]

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BELL, RL .

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[7] PSEUDOPOTENTIAL CALCULATIONS OF BAND STRUCTURE OF GAAS, INAAS AND (GAIN) AS ALLOYS [J].

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LETTINGTON, AH .

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[8] THEORY OF SURFACE STATES - GENERAL CRITERIA FOR THEIR EXISTENCE [J].

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[9] APPLICATION OF PSEUDOPOTENTIALS TO LOW-ENERGY ELECTRON DIFFRACTION .2. CALCULATION OF REFLECTED INTENSITIES [J].

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