NOVEL HEXAGONAL-FACET GAAS/ALGAAS LASER GROWN BY SELECTIVE-AREA METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：29
作者：
ANDO, S
KOBAYASHI, N
ANDO, H
机构：
[1] NTT Basic Research Laboratories, Tokyo
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 9B期
关键词：
METALORGANIC CHEMICAL VAPOR DEPOSITION; SELECTIVE EPITAXIAL GROWTH; HEXAGONAL FACET; MICRODISK LASER; RING CAVITY MODE;
D O I：
10.1143/JJAP.32.L1293
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A GaAs hexagonal prism structure with (110) sidewall facets perpendicular to the (111)B substrate surface is obtained by selective area metalorganic chemical vapor deposition using a SiO2 mask. These (110) sidewall facets are extremely smooth like a cleaved surface, so they can be used as the cavities of a semiconductor laser. A novel hexagonal-facet (HF) GaAs/AlGaAs double heterojunction laser structure is proposed and preliminary lasing characteristics are presented. The average threshold of the optical pumping energy for the HF-laser array is approximately 18 pJ for 416 nm excitation. Single-mode (inscribed hexagonal mode) lasing at 875 nm is obtained at room temperature.
引用
收藏
页码：L1293 / L1296
页数：4
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