ELECTRICAL AND OPTICAL-RESPONSE OF A VERY HIGH-FREQUENCY ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR

被引：0

作者：

MARTIN, MZ ^{[1
]}

OSHITA, FK ^{[1
]}

MATLOUBIAN, M ^{[1
]}

FETTERMAN, HR ^{[1
]}

HO, WJ ^{[1
]}

WANG, NL ^{[1
]}

CHANG, F ^{[1
]}

CHEUNG, D ^{[1
]}

机构：

[1] ROCKWELL INT SCI CTR,THOUSAND OAKS,CA 91358

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 06期

关键词：

D O I：

10.1063/1.357388

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The current gain cutoff frequency of very high frequency AlGaAs/GaAs heterojunction bipolar transistors has been measured at 300 and at 20 K using the picosecond optoelectronic technique. These devices showed cutoff frequencies of 72 and 84 GHz at room temperature and at a fixture temperature of 20 K, respectively. Optical response measurements were also obtained at visible and infrared wavelengths. The visible optical response shows a FWHM of 14 and 9.5 ps at 300 and 20 K, respectively. The infrared (lambda=850 nm) optical response, corresponding to deeper penetration, showed a FWHM significantly larger (>50 ps) than the visible optical response.

引用

页码：3847 / 3849

页数：3