INTLSB - AN INFRARED DETECTOR MATERIAL

被引：38

作者：

VANSCHILFGAARDE, M ^{[1
]}

SHER, A ^{[1
]}

CHEN, AB ^{[1
]}

机构：

[1] AUBURN UNIV,DEPT PHYS,AUBURN,AL 36849

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 16期

关键词：

D O I：

10.1063/1.109523

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In1-xTlxSb is proposed as promising infrared material. A number of optical and structural properties are studied within local density-functional theory. The alloy at x = 0.09 is estimated to have a gap of 0.1 eV. Although T1Sb is found to favor the CsCl structure, the zinc blende alloy is stable for low x values. A phase diagram is calculated to estimate the regions of stable phases and explore the conditions for growing narrow-gap In1-xTlxSb alloys.

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页码：1857 / 1859

页数：3

相关论文

共 13 条

[1] INFRARED MATERIAL REQUIREMENTS FOR THE NEXT GENERATION OF SYSTEMS [J].

BALCERAK, R .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (12C) :C1-C5

[2] STRUCTURAL-PROPERTIES OF BISMUTH-BEARING SEMICONDUCTOR ALLOYS [J].

BERDING, MA ;

SHER, A ;

CHEN, AB ;

MILLER, WE .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (01) :107-115

[3]

EVGENEV SB, 1985, INORG MATER+, V21, P1747

[4]

FEDOROV VI, 1970, TEPLOFIZ VYS TEMP, V8, P447

[5] LONG-WAVELENGTH 128 X 128 GAAS QUANTUM-WELL INFRARED PHOTODETECTOR ARRAYS [J].

LEVINE, BF ;

BETHEA, CG ;

GLOGOVSKY, KG ;

STAYT, JW ;

LEIBENGUTH, RE .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (12C) :C114-C119

[6]

METHFESSEL M, UNPUB

[7] III-V STRAINED LAYER SUPPERLATTICES FOR LONG-WAVELENGTH DETECTOR APPLICATIONS - RECENT PROGRESS [J].

OSBOURN, GC ;

DAWSON, LR ;

BIEFELD, RM ;

ZIPPERIAN, TE ;

FRITZ, IJ ;

DOYLE, BL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05) :3150-3152

[8] PHASE EQUILIBRIUM AND THERMODYNAMIC ANALYSIS OF SYSTEM ANTIMON-THALLIUM [J].

PREDEL, B ;

SCHWERMANN, W .

ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE, 1970, A 25 (06) :877-+

[9] HGCDTE STATUS REVIEW WITH EMPHASIS ON CORRELATIONS, NATIVE DEFECTS AND DIFFUSION [J].

SHER, A ;

BERDING, MA ;

VANSCHILFGAARDE, M ;

CHEN, AB .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (12C) :C59-C70

[10]

SOROKINA OV, 1983, RUSS J INORG CHEM, V28, P916