THEORY AND MEASUREMENT OF BACK BIAS VOLTAGE IN IMPATT DIODES - COMMENTS

被引：2

作者：

TIWARI, SC ^{[1
]}

机构：

[1] BANARAS HINDU UNIV,INST TECHNOL,CTR RES MICROWAVE TUBES,DEPT ELECTR ENGN,VARANASI 221005,UTTAR PRADESH,INDIA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1985年 / 33卷 / 01期

关键词：

D O I：

10.1109/TMTT.1985.1132951

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：72 / 74

页数：3

共 9 条

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[2]

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[4] 10-W AND 12-W GAAS IMPATTS [J].

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[5] TIME DEPENDENCE OF AVALANCHE PROCESSES IN SILICON [J].

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KAMINSKY, G .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) :2787-&

[6] THEORETICAL AND EXPERIMENTAL STUDY OF GAAS IMPATT OSCILLATOR EFFICIENCY [J].

SALMER, G ;

PRIBETICH, J ;

FARRAYRE, A ;

KRAMER, B .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :314-324

[7]

TIWARI SC, 1980, 10TH P EUR MICR C WA, P507

[8]

TIWARI SC, 1978, THESIS U RAJASTHAN J

[9]

TIWARI SC, 1984, INT J ELECTRON

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