NITROGEN-ASSOCIATED PARAMAGNETIC DEFECT CENTERS IN SPUTTERED SIO2-FILMS

被引:25
作者
FRIEBELE, EJ [1 ]
GRISCOM, DL [1 ]
HICKMOTT, TW [1 ]
机构
[1] IBM CORP,WATSON RES CTR,YORKTOWN HEIGHTS,NY 10589
关键词
D O I
10.1016/0022-3093(85)90306-0
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
17
引用
收藏
页码:351 / 359
页数:9
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