NITROGEN-ASSOCIATED PARAMAGNETIC DEFECT CENTERS IN SPUTTERED SIO2-FILMS

被引：25

作者：

FRIEBELE, EJ ^{[1
]}

GRISCOM, DL ^{[1
]}

HICKMOTT, TW ^{[1
]}

机构：

[1] IBM CORP,WATSON RES CTR,YORKTOWN HEIGHTS,NY 10589

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 71卷 / 1-3期

关键词：

D O I：

10.1016/0022-3093(85)90306-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：351 / 359

页数：9

共 50 条

[1] TRAPPING CENTERS IN SPUTTERED SIO2-FILMS
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