NEAR ROOM-TEMPERATURE CW OPERATION OF 660 NM VISIBLE ALGAAS MULTI-QUANTUM-WELL LASER-DIODES GROWN BY MOLECULAR-BEAM EPITAXY

被引:10
作者
IWAMURA, H
SAKU, T
HIRAYAMA, Y
SUZUKI, Y
OKAMOTO, H
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1985年 / 24卷 / 12期
关键词
D O I
10.1143/JJAP.24.L911
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L911 / L913
页数:3
相关论文
共 19 条
[1]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP VISIBLE LASER-DIODES OPERATING AT 0.66-0.68 MU-M AT ROOM TEMPERATURES [J].
ASAHI, H ;
KAWAMURA, Y ;
NAGAI, H .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6958-6964
[2]  
FUJII T, 1984, 16TH C SOL STAT DEV, P145
[3]   VERY SHORT WAVELENGTH (621.4 NM) ROOM-TEMPERATURE PULSED OPERATION OF INGAASP LASERS [J].
FUJIMOTO, A ;
YASUDA, H ;
SHIMURA, M ;
YAMASHITA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08) :L488-L490
[4]   GAALAS BURIED MULTIQUANTUM WELL LASERS FABRICATED BY DIFFUSION-INDUCED DISORDERING [J].
FUKUZAWA, T ;
SEMURA, S ;
SAITO, H ;
OHTA, T ;
UCHIDA, Y ;
NAKASHIMA, H .
APPLIED PHYSICS LETTERS, 1984, 45 (01) :1-3
[5]   YELLOW-EMITTING ALGALNP DOUBLE HETEROSTRUCTURE LASER DIODE AT 77-K GROWN BY ATMOSPHERIC METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
IKEDA, M ;
HONDA, M ;
MORI, Y ;
KANEKO, K ;
WATANABE, N .
APPLIED PHYSICS LETTERS, 1984, 45 (09) :964-966
[6]   DYNAMIC BEHAVIOR OF A GAAS-ALGAAS MQW LASER DIODE [J].
IWAMURA, H ;
SAKU, T ;
ISHIBASHI, T ;
OTSUKA, K ;
HORIKOSHI, Y .
ELECTRONICS LETTERS, 1983, 19 (05) :180-181
[7]   A SEGMENTED ELECTRODE MULTI-QUANTUM-WELL LASER DIODE [J].
IWAMURA, H ;
TARUCHA, S ;
SAKU, T ;
HORIKOSHI, Y ;
OKAMOTO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (11) :L751-L753
[8]   TRANSVERSE-MODE STABILIZED GA1-XALXAS VISIBLE DIODE-LASERS [J].
KAJIMURA, T ;
KURODA, T ;
YAMASHITA, S ;
NAKAMURA, M ;
UMEDA, J .
APPLIED OPTICS, 1979, 18 (11) :1812-1815
[9]   POLARIZATION-DEPENDENT GAIN-CURRENT RELATIONSHIP IN GAAS-ALGAAS MQW LASER-DIODES [J].
KOBAYASHI, H ;
IWAMURA, H ;
SAKU, T ;
OTSUKA, K .
ELECTRONICS LETTERS, 1983, 19 (05) :166-168
[10]  
KRESSEL H, 1978, J APPL PHYS, V49, P3140, DOI 10.1063/1.325307