LOW-THRESHOLD, HIGH-POWER, SINGLE-LONGITUDINAL-MODE OPERATION IN 1.5-MU-M MULTIPLE-QUANTUM-WELL, DISTRIBUTED-FEEDBACK LASER-DIODES

被引：9

作者：

KITAMURA, M

SASAKI, T

TAKANO, S

YAMADA, H

HASUMI, H

MITO, I

机构：

[1] NEC, Japan

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 23期

关键词：

Optical Communication - Semiconducting Gallium Compounds - Semiconductor Diodes;

D O I：

10.1049/el:19880973

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Extremely low-threshold, single-longitudinal-mode operation is reported for 1.5 μm band GaInAs multiple quantum well, distributed feedback laser diodes. A 5.5 mA minimum threshold current as well as 40 mw maximum light output power and 0.33 W/A maximum quantum efficiency have been attained under cw condition at room temperature.

引用

页码：1424 / 1426

页数：3