THEORY OF TEMPERATURE-DEPENDENCE OF ELECTRONIC BAND STRUCTURES

被引：341

作者：

ALLEN, PB

HEINE, V

机构：

[1] CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

[2] SUNY STONY BROOK,DEPT PHYS,STONY BROOK,NY 11794

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1976年 / 9卷 / 12期

关键词：

D O I：

10.1088/0022-3719/9/12/013

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2305 / 2312

页数：8

共 16 条

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[3]

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[4]

Brooks H., 1955, ADV ELECTRON, V7, P85

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[6]

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[8] TEMPERATURE-DEPENDENCE OF HGTE BAND-GAP [J].

GUENZER, CS ;

BIENENSTOCK, A .

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[9] ELECTRONIC BAND STRUCTURE AND COVALENCY IN DIAMOND-TYPE SEMICONDUCTORS [J].

HEINE, V ;

JONES, RO .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (04) :719-&

[10]

HOPFIELD JJ, 1968, COMMENTS SOLID STATE, V1, P16

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