NEW METHOD OF MODELING A MULTIPEAK RESONANT-TUNNELING DIODE

被引：11

作者：

HUANG, CY ^{[1
]}

MORRIS, JE ^{[1
]}

SU, YK ^{[1
]}

KUO, TH ^{[1
]}

机构：

[1] NATL CHENG KUNG UNIV,DEPT ELECT ENGN,TAINAN,TAIWAN

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 12期

关键词：

RESONANT TUNNELING DEVICES; SEMICONDUCTOR DEVICE MODELS;

D O I：

10.1049/el:19940636

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report an improved approach to modelling the I-V characteristics of a multipeak resonant tunnelling diode (RTD). The merit of this new RTD model is demonstrated.

引用

页码：1012 / 1013

页数：2

共 6 条

[1] [Anonymous], 1989, PSPICE USERS GUIDE
[2] Kuo T.-H., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P567, DOI 10.1109/IEDM.1989.74346
[3] KUO TH, 1990, THESIS
[4] 3 AND 6 LOGIC STATES BY THE VERTICAL INTEGRATION OF INALAS INGAAS RESONANT TUNNELING STRUCTURES
POTTER, RC
LAKHANI, AA
HIER, H
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) : 3735 - 3736
[5] 9-STATE RESONANT TUNNELING DIODE MEMORY
SEABAUGH, AC
KAO, YC
YUAN, HT
[J]. IEEE ELECTRON DEVICE LETTERS, 1992, 13 (09) : 479 - 481
[6] A NEW RESONANT-TUNNEL DIODE-BASED MULTIVALUED MEMORY CIRCUIT USING A MESFET DEPLETION LOAD
YAN, ZX
DEEN, MJ
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1992, 27 (08) : 1198 - 1202

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