GIANT 3RD-ORDER NONLINEAR SUSCEPTIBILITIES FOR INPLANE FAR-INFRARED EXCITATION OF SINGLE INAS QUANTUM-WELLS

被引:12
作者
MARKELZ, AG [1 ]
GWINN, EG [1 ]
SHERWIN, MS [1 ]
NGUYEN, C [1 ]
KROEMER, H [1 ]
机构
[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106
关键词
D O I
10.1016/0038-1101(94)90399-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Third-order, free-carrier nonlinear susceptibilities, chi(3), have been measured between 19 and 23 cm-1 for three InAs/AlSb quantum wells with sheet densities between 2.5 x 10(12) cm-2 and 8 x 10(12) cm-2. We find that these wells are strongly nonlinear at far-infrared frequencies: odd harmonics ninth order have been observed at high incident intensities, and the peak value of chi(3) reaches approximately 1 esu. This is several orders of magnitude larger than previously reported values for chi(3) in bulk n-GaAs (10(-4) esu)[1] and in polyacetylene (10(-7) esu)[2]. The large magnitude of chi(3) is attributed to the high carrier density in the InAs wells, and to the strong non-parabolicity of the conduction band in InAs. However, the free-carrier chi(3) for bulk InAs predicts a density-dependence different from that observed, and the measured decrease in chi(3) with increasing intensity indicates non-perturbative response. We find that the anisotropy of chi(3) displays the expected 4-fold symmetry.
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收藏
页码:1243 / 1245
页数:3
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