ATOMIC LAYER EPITAXY OF GAAS USING NITROGEN CARRIER GAS

被引：14

作者：

YOKOYAMA, H

SHINOHARA, M

INOUE, N

机构：

[1] NTT LSI Laboratories, Atsugi-shi, 243-01

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 17期

关键词：

D O I：

10.1063/1.106108

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic layer epitaxy (ALE) of GaAs is achieved in a relatively wide temperature range from 490 to 520-degrees-C by using nitrogen carrier gas. For hydrogen carrier gas, the corresponding temperature range is only from 490 to 500-degrees-C. The upper temperature limits for ALE correspond to the decomposition temperatures of TMG in each carrier gas. Gas analysis reveals that using nitrogen expands the temperature range by suppressing TMG decomposition.

引用

收藏

页码：2148 / 2150

页数：3

相关论文

共 9 条

[1] ATOMIC-LAYER GROWTH OF GAAS BY MODULATED-CONTINUOUS-WAVE LASER METAL-ORGANIC VAPOR-PHASE EPITAXY [J].

AOYAGI, Y ;

DOI, A ;

IWAI, S ;

NAMBA, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1460-1464

[2] ATOMIC LAYER EPITAXY FOR THE GROWTH OF HETEROSTRUCTURE DEVICES [J].

DENBAARS, SP ;

DAPKUS, PD ;

BEYLER, CA ;

HARIZ, A ;

DZURKO, KM .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :195-200

[3] CONSIDERATION OF THE EFFECT OF THE THERMAL-BOUNDARY LAYER ON CVD GROWTH-RATES [J].

HITCHMAN, ML .

JOURNAL OF CRYSTAL GROWTH, 1980, 48 (03) :394-402

[4] GAAS ATOMIC LAYER EPITAXY USING THE KRF EXCIMER LASER [J].

KAWAKYU, Y ;

ISHIKAWA, H ;

SASAKI, M ;

MASHITA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (08) :L1439-L1441

[5] A STUDY OF THE GROWTH-MECHANISM OF EPITAXIAL GAAS AS GROWN BY THE TECHNIQUE OF METAL ORGANIC VAPOR-PHASE EPITAXY [J].

LEYS, MR ;

VEENVLIET, H .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :145-153

[6] ON THE REACTION-MECHANISM OF GAAS MOCVD [J].

NISHIZAWA, J ;

KURABAYASHI, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) :413-417

[7] NEW APPROACH TO THE ATOMIC LAYER EPITAXY OF GAAS USING A FAST GAS-STREAM [J].

OZEKI, M ;

MOCHIZUKI, K ;

OHTSUKA, N ;

KODAMA, K .

APPLIED PHYSICS LETTERS, 1988, 53 (16) :1509-1511

[8] SELF-LIMITING MECHANISM IN THE ATOMIC LAYER EPITAXY OF GAAS [J].

TISCHLER, MA ;

BEDAIR, SM .

APPLIED PHYSICS LETTERS, 1986, 48 (24) :1681-1683

[9] GAAS ATOMIC LAYER EPITAXY BY HYDRIDE VPE [J].

USUI, A ;

SUNAKAWA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (03) :L212-L214