HYDROGEN PASSIVATION OF ACCEPTORS IN P-INP

被引：66

作者：

DAUTREMONTSMITH, WC

LOPATA, J

PEARTON, SJ

KOSZI, LA

STAVOLA, M

SWAMINATHAN, V

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 05期

关键词：

D O I：

10.1063/1.344508

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1993 / 1996

页数：4

共 20 条

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[4]

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EVANS, JS ;

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ELECTRONICS LETTERS, 1988, 24 (15) :929-931

[7] PASSIVATION OF DEEP LEVEL DEFECTS IN MOLECULAR-BEAM EPITAXIAL GAAS BY HYDROGEN PLASMA EXPOSURE [J].

DAUTREMONTSMITH, WC ;

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APPLIED PHYSICS LETTERS, 1986, 49 (17) :1098-1100

[8] PASSIVATION OF ACCEPTORS IN INP RESULTING FROM CH4/H2 REACTIVE ION ETCHING [J].

HAYES, TR ;

DAUTREMONTSMITH, WC ;

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LEE, JW .

APPLIED PHYSICS LETTERS, 1989, 55 (01) :56-58

[9] HYDROGEN PASSIVATION OF SHALLOW-ACCEPTOR IMPURITIES IN PARA-TYPE GAAS [J].

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[10] PASSIVATION OF THE DOMINANT DEEP LEVEL (EL2) IN GAAS BY HYDROGEN [J].

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