TRANSPARENCY OF THIN METAL-FILMS ON SEMICONDUCTOR SUBSTRATES

被引:22
作者
HOVEL, HJ [1 ]
机构
[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
关键词
D O I
10.1063/1.322504
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:4968 / 4970
页数:3
相关论文
共 9 条
[1]  
CARLSON EJ, 1975, J APPL PHYS, V46, P3982
[2]  
HASS G, 1972, AM I PHYSICS HDB, pCH6
[3]   EFFECTS OF INTERFACIAL OXIDE LAYERS ON PERFORMANCE OF SILICON SCHOTTKY-BARRIER SOLAR CELLS [J].
LILLINGTON, DR ;
TOWNSEND, WG .
APPLIED PHYSICS LETTERS, 1976, 28 (02) :97-98
[4]   OPTICAL CONSTANTS OF SILICON IN THE REGION 1 TO 10 EV [J].
PHILIPP, HR ;
TAFT, EA .
PHYSICAL REVIEW, 1960, 120 (01) :37-38
[5]   SCHOTTKY BARRIER PHOTODIODES WITH ANTIREFLECTION COATING [J].
SCHNEIDE.MV .
BELL SYSTEM TECHNICAL JOURNAL, 1966, 45 (09) :1611-&
[6]  
SERAPHIN BO, 1967, SEMICONDUCTORS SEMIM, V3
[7]   15PERCENT EFFICIENT ANTIREFLECTION-COATED METAL-OXIDE-SEMICONDUCTOR SOLAR CELL [J].
STIRN, RJ ;
YEH, YCM .
APPLIED PHYSICS LETTERS, 1975, 27 (02) :95-98
[8]  
STIRN RJ, 1974, 10TH IEEE PHOT SPEC, P15
[9]   DEFECT STRUCTURE OF CD-DOPED PBTE [J].
VYDYANATH, HR .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) :4993-5002