CHARACTERIZATION AND OPTIMIZATION OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED TUNGSTEN SILICIDE USING SCREENING AND RESPONSE-SURFACE EXPERIMENTAL-DESIGNS

被引：15
作者：
CLARK, TE
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期
关键词：
D O I：
10.1116/1.584429
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：1678 / 1687
页数：10
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