AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .1. LOCALIZED PHOTOMULTIPLICATION STUDIES ON MICROPLASMAS

被引：106

作者：

HAITZ, RH

GOETZBERGER, A

SCARLETT, RM

SHOCKLEY, W

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1963年 / 34卷 / 06期

关键词：

D O I：

10.1063/1.1702639

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1581 / &

共 13 条

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[6] VOLTAGE DEPENDENCE OF MICROPLASMA DENSITY IN P-N JUNCTIONS IN SILICON [J].

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[7]

HAITZ RH, 1963, B AM PHYS SOC, V7, P603

[8] VISIBLE LIGHT EMISSION AND MICROPLASMA PHENOMENA IN SILICON P-N JUNCTION .1. [J].

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[9]

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[10] ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J].

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