TRANSIT-TIME LIMITED RESPONSE OF GAAS METAL-SEMICONDUCTOR-METAL PHOTODIODES

被引：29

作者：

KLINGENSTEIN, M ^{[1
]}

KUHL, J ^{[1
]}

ROSENZWEIG, J ^{[1
]}

MOGLESTUE, C ^{[1
]}

AXMANN, A ^{[1
]}

机构：

[1] FRAUNHOFER INST APPL SOLID STATE PHYS,W-7800 FREIBURG,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 22期

关键词：

D O I：

10.1063/1.104857

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The response of GaAs metal-semiconductor-metal (MSM) photodiodes at low temperatures has been investigated in the time domain by photoconductive sampling. The dependence of the response time on temperature for T > 50 K can be described by phonon mediated intervalley and intravalley scattering. The pulse width drops from 10.8 ps at 300 K to 5.6 ps at 70 K and then grows rapidly with decreasing temperature below 50 K. These results demonstrate that the response is limited by the electron/hole transport in the semiconductor rather than by external capacitances or inductances.

引用

页码：2503 / 2505

页数：3

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