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THE MOS-DEPLETION-MODE-THYRISTOR - A NEW MOS CONTROLLED BIPOLAR POWER DEVICE
被引:0
作者
:
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
CORP RES & DEV CTR,SCHENECTADY,NY 12309
CORP RES & DEV CTR,SCHENECTADY,NY 12309
BALIGA, BJ
[
1
]
CHANG, HR
论文数:
0
引用数:
0
h-index:
0
机构:
CORP RES & DEV CTR,SCHENECTADY,NY 12309
CORP RES & DEV CTR,SCHENECTADY,NY 12309
CHANG, HR
[
1
]
机构
:
[1]
CORP RES & DEV CTR,SCHENECTADY,NY 12309
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1988年
/ 35卷
/ 12期
关键词
:
D O I
:
10.1109/16.8903
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:2458 / 2458
页数:1
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[J].
IEEE ELECTRON DEVICE LETTERS,
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[3]
Stoisiek M., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P158
[4]
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←
1
→
共 4 条
[1]
THE INSULATED GATE TRANSISTOR - A NEW 3-TERMINAL MOS-CONTROLLED BIPOLAR POWER DEVICE
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
INTERSIL INC,CUPERTINO,CA
INTERSIL INC,CUPERTINO,CA
BALIGA, BJ
ADLER, MS
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0
引用数:
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0
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INTERSIL INC,CUPERTINO,CA
INTERSIL INC,CUPERTINO,CA
ADLER, MS
LOVE, RP
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0
引用数:
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0
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INTERSIL INC,CUPERTINO,CA
INTERSIL INC,CUPERTINO,CA
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0
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机构:
INTERSIL INC,CUPERTINO,CA
INTERSIL INC,CUPERTINO,CA
GRAY, PV
ZOMMER, ND
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0
引用数:
0
h-index:
0
机构:
INTERSIL INC,CUPERTINO,CA
INTERSIL INC,CUPERTINO,CA
ZOMMER, ND
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1984,
31
(06)
: 821
-
828
[2]
THE COMFET - A NEW HIGH CONDUCTANCE MOS-GATED DEVICE
RUSSELL, JP
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0
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RCA CORP,MOUNTAINTOP,PA 18707
RUSSELL, JP
GOODMAN, AM
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引用数:
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机构:
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RCA CORP,MOUNTAINTOP,PA 18707
GOODMAN, AM
GOODMAN, LA
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h-index:
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h-index:
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NEILSON, JM
[J].
IEEE ELECTRON DEVICE LETTERS,
1983,
4
(03)
: 63
-
65
[3]
Stoisiek M., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P158
[4]
Temple V. A. K., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P282
←
1
→