TRANSIENT PHOTOCONDUCTIVITY IN GAINAS/INP MQW

被引：1
|
作者：
VICKERS, AJ
KAPETANAKIS, L
机构：
[1] Dept. of Phys., Essex Univ.
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1995年 / 10卷 / 06期
关键词：
D O I：
10.1088/0268-1242/10/6/014
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Transient photoconductivity in nominally undoped (n-type background doping) Ga(0.47)ln(0.53)As/lnP multiquantum well heterostructures is reported. The observed responses exhibited an initial fast decay followed by a much slower subsequent decay. The slow decay was consistent with a kinetic radiative recombination model which included free carriers, excitons and photon recycling. A model describing the fast initial decay is presented in terms of fast barrier radiative recombination. A comparison between the experimental results and the model shows good agreement.
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页码：829 / 834
页数：6
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