N+-INP(SILICON IMPLANTED)-P-INP HOMOJUNCTION - MINORITY-CARRIER DIFFUSION LENGTH IN THE IMPLANTED LAYER

被引：2
作者：
GOUSKOV, L
CONJEAUD, AL
DHOUIB, A
FAVENNEC, PN
SALVI, M
LHARIDON, H
BASTIDE, G
BAYAA, D
机构：
[1] CTR NATL ETUD TELECOMMUN,F-22301 LANNION,FRANCE
[2] UNIV MONTPELLIER 2,ETUD SEMICOND GRP,F-34060 MONTPELLIER,FRANCE
来源：
SOLAR CELLS | 1984年 / 11卷 / 04期
关键词：
D O I：
10.1016/0379-6787(84)90098-X
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
引用
收藏
页码：343 / 355
页数：13
相关论文
共 15 条
[1]   DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1983, 27 (02) :985-1009
[2]   CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV [J].
CASEY, HC ;
SELL, DD ;
WECHT, KW .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :250-257
[3]   EVIDENCE FOR LOW SURFACE RECOMBINATION VELOCITY ON N-TYPE INP [J].
CASEY, HC ;
BUEHLER, E .
APPLIED PHYSICS LETTERS, 1977, 30 (05) :247-249
[4]  
FAVENNEC PN, 1980, THESIS TOULOUSE
[5]   ELECTRON-DIFFUSION LENGTHS IN PARA-TYPE INP INVOLVED IN INDIUM TIN OXIDE PARA-INP SOLAR-CELLS [J].
GOUSKOV, L ;
LUQUET, H ;
SOONCKINDT, L ;
OEMRY, A ;
BOUSTANI, M ;
NGUYEN, PH .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :7014-7019
[6]   NORMAL (INDIUM TIN OXIDE) PARA-INP SOLAR-CELLS [J].
GOUSKOV, L ;
LUQUET, H ;
ESTA, J ;
GRIL, C .
SOLAR CELLS, 1981, 5 (01) :51-66
[7]  
HARSHA KSS, 1977, APPL PHYS LETT, V30, P645
[8]   MEASUREMENT OF SURFACE RECOMBINATION VELOCITY IN SEMICONDUCTORS BY DIFFRACTION FROM PICOSECOND TRANSIENT FREE-CARRIER GRATINGS [J].
HOFFMAN, CA ;
JARASIUNAS, K ;
GERRITSEN, HJ ;
NURMIKKO, AV .
APPLIED PHYSICS LETTERS, 1978, 33 (06) :536-539
[9]  
HOFFMAN CA, 1980, APPL PHYS LETT, V51, P1063
[10]  
Hovel H. J., 1975, SEMICONDUCTOR SEMIME, V11
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