DENSIFICATION OF ALUMINUM FLUORIDE THIN-FILMS BY ION-ASSISTED DEPOSITION

被引：9

作者：

TARGOVE, JD ^{[1
]}

BOVARD, BG ^{[1
]}

LINGG, LJ ^{[1
]}

MACLEOD, HA ^{[1
]}

机构：

[1] UNIV ARIZONA,CTR OPT SCI,TUCSON,AZ 85721

来源：

THIN SOLID FILMS | 1988年 / 159卷

关键词：

Argon - Infrared Radiation - Ion Beams - Ultraviolet Radiation;

D O I：

10.1016/0040-6090(88)90665-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The authors have shown that AlF3 films which exhibit packing densities near unity can be deposited with argon ion bombardment, but at the expense of absorption in the UV. A set of compromise conditions have been demonstrated which minimize the absorption but which still increase the packing density significantly. Their experience with MgF2 and Na3AlF6 suggests that oxygen ion bombardment would alleviate the absorption; however, it would also increase the refractive index of the films as the oxygen content of the coatings increased.

引用

页码：L57 / L59

页数：3

共 9 条

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