SILICON HIGH-RESISTIVITY-SUBSTRATE MILLIMETER-WAVE TECHNOLOGY

被引：44

作者：

BUECHLER, J ^{[1
]}

KASPER, E ^{[1
]}

RUSSER, P ^{[1
]}

STROHM, KM ^{[1
]}

机构：

[1] AEG RES CTR,ULM,FED REP GER

来源：

关键词：

D O I：

10.1109/TMTT.1986.1133572

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1516 / 1521

页数：6

共 10 条

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[2] BRENNAN R, 1984, SOLID STATE TECH DEC, P127
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[4] JANSEN RH, 1983, AEU-ARCH ELEKTRON UB, V37, P108
[5] HIGH-SPEED INTEGRATED-CIRCUIT USING SILICON MOLECULAR-BEAM EPITAXY (SI-MBE)
KASPER, E
WORNER, K
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (10) : 2481 - 2486
[6] MICROSTRIP IMPATT-DIODE OSCILLATOR FOR 100-GHZ
MORGAN, GB
[J]. ELECTRONICS LETTERS, 1981, 17 (16) : 570 - 571
[7] ROSEN A, 1981, RCA REV, V42, P633
[8] STABILE PJ, 1984, RCA REV, V45, P587
[9] STROHM KM, 1986, APR EUROCON 86 P PAR
[10] STUTZMAN WL, 1981, ANTENNA THEORY DESIG, P537