ON CONCENTRATION DEPENDENCES OF THE BAND PARAMETERS IN AIIBVI SOLID-SOLUTIONS WITH STRUCTURAL PHASE-TRANSITIONS

被引:12
作者
ARESHKIN, AG
SUSLINA, LG
FEDOROV, DL
机构
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1989年 / 154卷 / 02期
关键词
D O I
10.1002/pssb.2221540220
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:609 / 621
页数:13
相关论文
共 39 条
[1]  
ABLYAZOV NN, 1983, FIZ TVERD TELA+, V25, P353
[2]  
AKHEKYAN AM, 1985, KVANTOVAYA ELEKTRON+, V12, P1113
[3]  
ANANEVA GV, 1968, FIZ TVERD TELA, V10, P1800
[4]  
ARESHKIN AG, 1986, FIZ TVERD TELA+, V28, P3743
[5]  
ARESHKIN AG, 1985, P C PHYSICS SEMICO 1, P95
[6]  
AVEN M, 1967, PHYSICS CHEM 2 6 COM
[7]   BAND-STRUCTURE OF SEMICONDUCTOR ALLOYS BEYOND VIRTUAL CRYSTAL APPROXIMATION, EFFECT OF COMPOSITIONAL DISORDER ON ENERGY GAPS IN GAPXAS1-X [J].
BALDERESCHI, A ;
MASCHKE, K .
SOLID STATE COMMUNICATIONS, 1975, 16 (01) :99-102
[8]   ELECTRON-HOLE LIQUIDS IN POLAR SEMICONDUCTORS [J].
BENI, G ;
RICE, TM .
PHYSICAL REVIEW LETTERS, 1976, 37 (13) :874-877
[9]  
BERCHENKO NN, 1982, A3B6 SOLID SOLUTIONS, P208
[10]  
BIR GL, 1971, FIZ TVERD TELA, V13, P3551