CDTE EPITAXIAL-FILMS AND THEIR PROPERTIES

被引：5

作者：

MAXIMOVSKY, SN ^{[1
]}

REVOCATOVA, IP ^{[1
]}

SALMAN, VM ^{[1
]}

SELEZNEVA, MA ^{[1
]}

LEBEDEU, PN ^{[1
]}

机构：

[1] MOSCOW PHYS INST,MOSCOW,USSR

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1977年 / 12卷 / 02期

关键词：

D O I：

10.1051/rphysap:01977001202016100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：161 / 165

页数：5

共 12 条

[1] FETISOV DV, 1972, REPORTS AN USSR P, V36, P1861
[2] KALUGINA LI, 1970, RADIOTEKH ELEKTRON, V15, P2623
[3] MAXIMOVSKY SN, 1971, JUN P INT S CADM TEL, pR12
[4] PONOMAREV A, 1969, ELECTRONICAL TECHN 2, P8
[5] PONOMAREV A, 1969, ELECTRONICAL TECHN 2, P45
[6] PYKUS GE, 1965, ORIGIN SEMICONDUCTOR, P191
[7] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS
SAH, CT
NOYCE, RN
SHOCKLEY, W
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243
[8] SELEZNEVA MA, 1975, 38 APPL MATH I AN US
[9] SELEZNEVA MA, 1975, 60 APPL MATH I AN US
[10] SELEZNEVA MA, 1975, SHORT PHYSICAL REPOR, P45