ATOMIC ABRUPTNESS IN INGAASP/INP QUANTUM WELL HETEROINTERFACES GROWN BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：28
作者：
THIJS, PJA
MONTIE, EA
VANKESTEREN, HW
HOOFT, GW
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 11期
关键词：
D O I：
10.1063/1.100084
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：971 / 973
页数：3
相关论文
共 16 条
[1]  
Agrawal G, 1986, LONG WAVELENGTH SEMI
[2]   UNAMBIGUOUS OBSERVATION OF THE 2S STATE OF THE LIGHT-HOLE AND HEAVY-HOLE EXCITONS IN GAAS-(ALGA) AS MULTIPLE-QUANTUM-WELL STRUCTURES [J].
DAWSON, P ;
MOORE, KJ ;
DUGGAN, G ;
RALPH, HI ;
FOXON, CTB .
PHYSICAL REVIEW B, 1986, 34 (08) :6007-6010
[3]   QUANTUM WELL STRUCTURES OF IN0.53GA0.47AS/INP GROWN BY HYDRIDE VAPOR-PHASE EPITAXY IN A MULTIPLE CHAMBER REACTOR [J].
DIGIUSEPPE, MA ;
TEMKIN, H ;
PETICOLAS, L ;
BONNER, WA .
APPLIED PHYSICS LETTERS, 1983, 43 (10) :906-908
[4]   OPTICAL INVESTIGATION OF MQW SYSTEM INP-INGAAS-INP [J].
KODAMA, K ;
OZEKI, M ;
KOMENO, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :696-699
[5]   PHOTOLUMINESCENCE FROM IN0.53GA0.47AS/INP QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].
MARSH, JH ;
ROBERTS, JS ;
CLAXTON, PA .
APPLIED PHYSICS LETTERS, 1985, 46 (12) :1161-1163
[6]   PHOTOLUMINESCENCE INVESTIGATION OF INGAAS-INP QUANTUM-WELLS [J].
MORONI, D ;
ANDRE, JP ;
MENU, EP ;
GENTRIC, P ;
PATILLON, JN .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) :2003-2008
[7]   OPTICAL-PROPERTIES OF VERY THIN GAINAS(P)/INP QUANTUM-WELLS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].
PANISH, MB ;
TEMKIN, H ;
HAMM, RA ;
CHU, SNG .
APPLIED PHYSICS LETTERS, 1986, 49 (03) :164-166
[8]   RECENT ADVANCES IN MOCVD GROWTH OF INXGA1-XASYP1-Y ALLOYS [J].
RAZEGHI, M ;
DUCHEMIN, JP .
JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :145-149
[9]   GROWTH OF GA0.47IN0.53AS-INP QUANTUM WELLS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
RAZEGHI, M ;
HIRTZ, JP ;
ZIEMELIS, UO ;
DELALANDE, C ;
ETIENNE, B ;
VOOS, M .
APPLIED PHYSICS LETTERS, 1983, 43 (06) :585-587
[10]  
RAZEGHI M, 1985, I PHYS C SER, V74, P379
12