COMMON ANION HETEROJUNCTIONS - CDTE-CDHGTE

被引：45

作者：

MIGLIORATO, P ^{[1
]}

WHITE, AM ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 01期

关键词：

D O I：

10.1016/0038-1101(83)90162-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：65 / 69

页数：5

共 19 条

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[3]

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CHIANG, SY ;

PEARSON, GL .

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[6]

FAHREMBRUCH AL, SOLAR ENERGY CONVERS, V31

[7] INTERSTITIAL POTENTIAL DIFFERENCES, ELECTRONEGATIVITY DIFFERENCES, AND EFFECTIVE IONIC CHARGES IN ZINC-BLENDE-TYPE SEMICONDUCTORS [J].

FRENSLEY, WR ;

KROEMER, H .

APPLIED PHYSICS LETTERS, 1977, 31 (01) :48-50

[8] PREDICTION OF SEMICONDUCTOR HETEROJUNCTION DISCONTINUITIES FROM BULK BAND STRUCTURES [J].

FRENSLEY, WR ;

KROEMER, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :810-815

[9] THEORY OF ENERGY-BAND LINEUP AT AN ABRUPT SEMICONDUCTOR HETEROJUNCTION [J].

FRENSLEY, WR ;

KROEMER, H .

PHYSICAL REVIEW B, 1977, 16 (06) :2642-2652

[10] ELEMENTARY THEORY OF HETEROJUNCTIONS [J].

HARRISON, WA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :1016-1021

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