HYDROGEN PASSIVATION OF GOLD-RELATED DEEP LEVELS IN SILICON

被引：107
作者：
PEARTON, SJ
TAVENDALE, AJ
机构：
来源：
PHYSICAL REVIEW B | 1982年 / 26卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.26.7105
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：7105 / 7108
页数：4
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